Research progress on gallium arsenide quantum well laser of Shanghai Institute of Microsystems, Chinese Academy of Sciences

China Instrument Network Instrument Development Recently, significant progress has been made in the research of gallium arsenide (GaAsBi) quantum well lasers of the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences.

The research team led by the researcher Wang Haomin used molecular beam epitaxy to grow gallium arsenide and strontium quantum well materials, and successfully fabricated an electric pumped gallium arsenide and room temperature (300 K) quantum well laser with the longest emission wavelength (1.142 μm). Breaking through the world record of 1.06 microns before, the maximum output power of pulse lasing reached 127 mW, and continuous lasing was first reported at 273 K.
A related research paper "1.142 μm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy" was published on ACS Photonics on June 5, 2017 (DOI: 10.1021/acsphotonics.7b00240).
Diluted semiconductor materials have a series of excellent characteristics that are different from those of the traditional three-five materials. It is a potential new photoelectric device material, and it is also one of the hot research areas in the world. Among them, gallium arsenide and bismuth materials are considered as one of the most promising new materials for uncooled lasers in optical communication systems due to their large bandgap shrinkage effect, spin-orbit splitting energy, and low temperature sensitivity. However, in order to effectively infiltrate the germanium component, gallium arsenic, germanium, germanium, germanium, germanium, gallium, arsenic, germanium, germanium, arsenic, germanium, germanium, arsenic, germanium, germanium, arsenic, germanium, germanium, arsenic, germanium, germanium, arsenic, germanium, germanium, arsenic, germanium
Wu Xiaoyan and Pan Wenwu of the Chinese Institute of Microsystem and Information Technology, Chinese Academy of Sciences, have optimized the growth of high-quality gallium arsenide and gallium quantum well materials based on molecular beam epitaxy, and succeeded in preparing higher performance gallium arsenide germanium quantum well lasers with an extended emission wavelength. 1.142 microns, while its characteristic temperature and wavelength temperature sensitivity are better than current commercial InP-based lasers. This research will help promote the application of new thin layer materials in the field of optoelectronic devices.
The work was funded by the 973 project and the National Natural Science Foundation of China.
(Original Title: Shanghai Institute of Microsystems has made significant progress in the research of gallium arsenide quantum well lasers)

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